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SSM3K324R Datasheet - Toshiba Semiconductor

SSM3K324R-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3K324R

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

325.93 KB

Description:

Silicon n-channel mosfet.

SSM3K324R, Silicon N-Channel MOSFET

SSM3K324R Features

* (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Internal Circuit SOT-23F SSM3K324R 1: Gate 2: Source 3: Drain ©2021-2025 1 Toshiba Electronic Device

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