SSM3K324R - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3K324R
Manufacturer	Toshiba ↗ Semiconductor
File Size	325.93 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K324R-ToshibaSemiconductor.pdf

(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Internal Circuit SOT-23F SSM3K324R 1: Gate 2: Source 3: Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-10 2025-01-30 Rev.6.0 SSM3K324R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol.

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Published: Sep 18, 2014 |