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SSM3K324R Silicon N-Channel MOSFET

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Description

MOSFETs Silicon N-Channel MOS SSM3K324R 1.Applications * Power Management Switches * DC-DC Converters 2..

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Features

* (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Internal Circuit SOT-23F SSM3K324R 1: Gate 2: Source 3: Drain ©2021-2025 1 Toshiba Electronic Device

Applications

* Power Management Switches

SSM3K324R Distributors

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