SSM3K324R Datasheet, mosfet equivalent, Toshiba Semiconductor

SSM3K324R Features

• Mosfet (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 72 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 109 mΩ (max) (@VGS = 1.8 V) 3. Pac

PDF File Details

Part number:

SSM3K324R

Manufacturer:

Toshiba (https://www.toshiba.com/) Semiconductor

File Size:

325.93kb

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📄 Datasheet

Description:

Silicon n-channel mosfet.

SSM3K324R Application

• Applications
• Power Management Switches
• DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resist

TAGS

SSM3K324R

Toshiba Semiconductor

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