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SSM3K309T Silicon N-Channel MOSFET

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Description

SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T ○ Power Management Switch Applications ○ High-Current Switching Applic.

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Applications

* ○ High-Current Switching Applications
* 1.8V drive
* Low on-resistance : Ron = 47mΩ (max) (@VGS = 1.8V) : Ron = 35mΩ (max) (@VGS = 2.5V) : Ron = 31mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain
* source voltage

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