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SSM3K309T Datasheet - Toshiba Semiconductor

SSM3K309T Silicon N-Channel MOSFET

SSM3K309T TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K309T ○ Power Management Switch Applications ○ High-Current Switching Applications 1.8V drive Low on-resistance : Ron = 47mΩ (max) (@VGS = 1.8V) : Ron = 35mΩ (max) (@VGS = 2.5V) : Ron = 31mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain source voltage VDS 20 V Gate source voltage VGSS ±12 V Drain current DC ID P.

SSM3K309T Datasheet (255.91 KB)

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Datasheet Details

Part number:

SSM3K309T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

255.91 KB

Description:

Silicon n-channel mosfet.

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SSM3K309T Silicon N-Channel MOSFET Toshiba Semiconductor

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