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SSM3K318R Datasheet - Toshiba

SSM3K318R Silicon N-Channel MOSFET

SSM3K318R Features

* (1) 4.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 107 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K318R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2015-02 2016-08-23 R

SSM3K318R-Toshiba.pdf

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Datasheet Details

Part number:

SSM3K318R

Manufacturer:

Toshiba ↗

File Size:

226.85 KB

Description:

Silicon n-channel mosfet.

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SSM3K318R SSM3K318R Silicon N-Channel MOSFET Toshiba

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