SSM3K301T Datasheet (Toshiba Semiconductor)

SSM3K301T, Silicon N-Channel MOSFET

SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 110 mΩ (max) (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V) Ron = 56 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage VDS VGSS 20 V ± 12 V /Package Drain current DC