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SSM3K339R - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	SSM3K339R
Manufacturer	Toshiba ↗
File Size	316.56 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K339R-Toshiba.pdf

SSM3K339R Product details

Features

(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (typ. ) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155 mΩ (typ. ) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 160 mΩ (typ. ) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 180 mΩ (typ. ) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 220 mΩ (typ. ) (@VGS = 1.8 V, ID = 0.2 A) 3. Packaging and Pin Assignment SOT-23F SSM3K339R 1: Gate 2: Source 3: Drain ©2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-02.

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Published: Nov 11, 2019 |