SSM3K303T Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications * 4 V drive * Low O.

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Datasheet Specifications

Part number: SSM3K303T
Manufacturer: Toshiba ↗ Semiconductor
File Size: 234.64 KB
Datasheet: SSM3K303T_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* 4 V drive
* Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain
* source voltage VDS 30 V Gate
* source voltage VGSS ± 20 V Drain current

SSM3K303T Distributors

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SSM3K303T Silicon N-Channel MOSFET Toshiba Semiconductor

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