Datasheet4U Logo Datasheet4U.com

SSM3K303T Datasheet - Toshiba Semiconductor

SSM3K303T Silicon N-Channel MOSFET

SSM3K303T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K303T High Speed Switching Applications 4 V drive Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Drain source voltage VDS 30 V Gate source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 2.9 A 5.8 Drain power dissipation PD (Note 1) 700 mW Channel.

SSM3K303T Datasheet (234.64 KB)

Preview of SSM3K303T PDF
SSM3K303T Datasheet Preview Page 2 SSM3K303T Datasheet Preview Page 3

Datasheet Details

Part number:

SSM3K303T

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

234.64 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

SSM3K301T Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K302T Power Management Switch Applications (Toshiba Semiconductor)

SSM3K309T Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K310T Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K315T Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K316T MOSFET (Toshiba Semiconductor)

SSM3K318R Silicon N-Channel MOSFET (Toshiba)

SSM3K318T Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

SSM3K303T Silicon N-Channel MOSFET Toshiba Semiconductor

SSM3K303T Distributor