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SSM3K2615TU

Silicon N-Channel MOSFET

SSM3K2615TU Features

* (1) AEC-Q101 Qualified (Note1). (2) 3.3-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 380 mΩ (typ.) (@VGS = 3.3 V, ID = 0.5 A) RDS(ON) = 330 mΩ (typ.) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 230 mΩ (typ.) (@VGS = 10 V, ID = 1.0 A) Note1: For detail information, please contact to

SSM3K2615TU Datasheet (454.92 KB)

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Datasheet Details

Part number:

SSM3K2615TU

Manufacturer:

Toshiba ↗

File Size:

454.92 KB

Description:

Silicon n-channel mosfet.

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SSM3K2615TU Silicon N-Channel MOSFET Toshiba

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