SSM3K2615TU - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 Qualified (Note1). (2) 3.3-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 380 mΩ (typ. ) (@VGS = 3.3 V, ID = 0.5 A) RDS(ON) = 330 mΩ (typ. ) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 230 mΩ (typ. ) (@VGS = 10 V, ID = 1.0 A) Note1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment UFM SSM3K2615TU 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-06 2016-12-05 Rev.2.0 SSM3K2615TU 4. Absolut.

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Published: Dec 14, 2023 |