SSM3K04FE High Speed Switching Applications

Toshiba Semiconductor

SSM3K04FE Description

SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications * * *

SSM3K04FE Applications

* With built-in gate-source resistor: RGS = 1 MΩ (typ. ) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm www. DataSheet4U. com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC dra

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Datasheet Details

Part number: SSM3K04FE
Manufacturer: Toshiba ↗ Semiconductor
File Size: 608.73 KB
Datasheet: SSM3K04FE_ToshibaSemiconductor.pdf
Description: High Speed Switching Applications

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High Speed Switching Applications Toshiba Semiconductor

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