Datasheet Specifications
- Part number
- SSM3K02F
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 157.00 KB
- Datasheet
- SSM3K02F_ToshibaSemiconductor.pdf
- Description
- TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Description
SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications * * * Small package Low on.
Applications
* Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current PuSSM3K02F Distributors
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