SSM3K03FV Datasheet (Toshiba Semiconductor) - High Speed Switching Applications

SSM3K03FV, High Speed Switching Applications

SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05 Unit: mm 2.5 V gate drive 1.2±0.05 0.8±0.05 High input impedance Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID PD (N