SSM3K01T Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T SSM3K01T High Speed Switching Applications Unit: mm * Small Package

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Datasheet Specifications

Part number: SSM3K01T
Manufacturer: Toshiba ↗ Semiconductor
File Size: 212.25 KB
Datasheet: SSM3K01T_ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* Unit: mm
* Small Package
* Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V)
* Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-S

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SSM3K01T Silicon N-Channel MOSFET Toshiba Semiconductor

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