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SSM3K02T High Speed Switching Applications

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Description

SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications * * * Small pa.

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Applications

* Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) w w w . D a t a S h e e t 4 U . c o m Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

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