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SSM3K01F Silicon N-Channel MOSFET

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Description

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01F SSM3K01F High Speed Switching Applications Unit: mm * Small package

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Applications

* Unit: mm
* Small package
* Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V)
* Low gate threshold voltage: Vth = 0.6 to 1.1 V (VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-sou

SSM3K01F Distributors

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