SSM3K04FV High Speed Switching Applications

Toshiba Semiconductor

Description

SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.0.

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Datasheet Specifications

Part number: SSM3K04FV
Manufacturer: Toshiba ↗ Semiconductor
File Size: 559.53 KB
Datasheet: SSM3K04FV_ToshibaSemiconductor.pdf
Description: High Speed Switching Applications

Applications

* 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05
* With built-in gate-source resistor: RGS = 1 MΩ (typ. ) 2.5 V gate drive High input impedance 1.2±0.05 0.8±0.05 0.4 Low gate threshold voltage: Vth = 0.7~1.3 V Absolute Maximum Ratings (Ta = 25°C

SSM3K04FV Distributors

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SSM3K04FV High Speed Switching Applications Toshiba Semiconductor

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