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SSM3K04FU Datasheet - Toshiba Semiconductor

SSM3K04FU High Speed Switching Applications

SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol V.

SSM3K04FU Datasheet (616.17 KB)

Preview of SSM3K04FU PDF

Datasheet Details

Part number:

SSM3K04FU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

616.17 KB

Description:

High speed switching applications.

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SSM3K04FU High Speed Switching Applications Toshiba Semiconductor

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