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SSM3K101TU Datasheet - Toshiba Semiconductor

SSM3K101TU Silicon N Channel MOS Type High Speed Switching Applications

www.DataSheet4U.com SSM3K101TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K101TU High Speed Switching Applications 1.8V drive Low on-resistance: Ron = 230mΩ (max) (@VGS = 1.8 V) Ron = 138mΩ (max) (@VGS = 2.5 V) Ron = 103mΩ (max) (@VGS = 4.0 V) 0.65±0.05 1 2 3 0.166±0.05 Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temper.

SSM3K101TU Datasheet (177.79 KB)

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Datasheet Details

Part number:

SSM3K101TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

177.79 KB

Description:

Silicon n channel mos type high speed switching applications.

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SSM3K101TU Silicon Channel MOS Type High Speed Switching Applications Toshiba Semiconductor

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