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SSM3K107TU Silicon N Channel MOS Type High-Speed Switching Applications

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www.DataSheet4U.com SSM3K107TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K107TU High-Speed Switching Applications *

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Applications

* 4 V drive Low ON-resistance: Unit: mm Ron = 410 mΩ (max) (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V) 0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain
* source voltage Gate
* source voltage Drain current D

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