SSM3K106TU Datasheet (Toshiba Semiconductor)

SSM3K106TU, Silicon N-Channel MOSFET

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 530 mΩ (max) (@VGS = 4 V) Ron = 310 mΩ (max) (@VGS = 10 V) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage