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SSM3K106TU Silicon N-Channel MOSFET

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Description

SSM3K106TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K106TU High-Speed Switching Applications * 4 V drive * Lo.

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Applications

* 4 V drive
* Low ON-resistance: Ron = 530 mΩ (max) (@VGS = 4 V) Ron = 310 mΩ (max) (@VGS = 10 V) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source vol

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SSM3K106TU Silicon N-Channel MOSFET Toshiba Semiconductor
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