Datasheet4U Logo Datasheet4U.com

SSM3K16TE Datasheet - Toshiba Semiconductor

SSM3K16TE High Speed Switching Applications Analog Switch Applications

SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Analog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 20 ±10 100.

SSM3K16TE Datasheet (136.57 KB)

Preview of SSM3K16TE PDF

Datasheet Details

Part number:

SSM3K16TE

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

136.57 KB

Description:

High speed switching applications analog switch applications.

📁 Related Datasheet

SSM3K16CT Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K16CTC Silicon N-Channel MOSFET (Toshiba)

SSM3K16FS Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K16FU Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K16FV Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K101TU Silicon N Channel MOS Type High Speed Switching Applications (Toshiba Semiconductor)

SSM3K102TU High Speed Switching Applications (Toshiba Semiconductor)

SSM3K104TU Silicon N-Channel MOSFET (Toshiba Semiconductor)

SSM3K105TU Silicon N Channel MOS Type High Speed Switching Applications (Toshiba Semiconductor)

SSM3K106TU Silicon N-Channel MOSFET (Toshiba Semiconductor)

TAGS

SSM3K16TE High Speed Switching Applications Analog Switch Applications Toshiba Semiconductor

Image Gallery

SSM3K16TE Datasheet Preview Page 2 SSM3K16TE Datasheet Preview Page 3

SSM3K16TE Distributor