SSM3K15ACT Datasheet (Toshiba Semiconductor)

SSM3K15ACT, Silicon N-Channel MOSFET

SSM3K15ACT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM3K15ACT Load Switching Applications 2.5 V drive Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDSS 30 V VGSS ± 20 V ID