SSM5G04TU Datasheet - Toshiba Semiconductor

SSM5G04TU DC-DC Converter

SSM5G04TU www.DataSheet4U.com Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5G04TU DC-DC Converter Combined Pch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 12 ±12 1.0 2.0 0.5 0.8 150 Unit V V A D.

SSM5G04TU Features

* tor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid

SSM5G04TU Datasheet (223.20 KB)