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SSM5G11TU Silicon Epitaxial Schottky Barrier Diode

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Description

SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications * *

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Applications

* 4-V drive Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel tem

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Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor
Toshiba Semiconductor SSM5G11TU-like datasheet