SSM5G11TU Datasheet - Toshiba Semiconductor

SSM5G11TU Silicon Epitaxial Schottky Barrier Diode

SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications 4-V drive Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temperature Symbol VDSS VGSS ID IDP PD (Note 1) Tch Rating -30 ± 20 -1.4 A -.

SSM5G11TU Features

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SSM5G11TU Datasheet (925.33 KB)