Datasheet Specifications
- Part number
- SSM5G11TU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 925.33 KB
- Datasheet
- SSM5G11TU-ToshibaSemiconductor.pdf
- Description
- Silicon Epitaxial Schottky Barrier Diode
Description
SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications * *
Applications
* 4-V drive Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel temSSM5G11TU Distributors
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