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SSM5G06FE Datasheet - Toshiba

SSM5G06FE Silicon Epitaxial Schottky Barrier Diode

SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications Combined a P-channel MOSFET and a Schottky barrier diode in one package. Optimum for high-density mounting in small packages Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±10 V Drain current DC ID 100 mA Pulse IDP (Note 2) .

SSM5G06FE Datasheet (291.57 KB)

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Datasheet Details

Part number:

SSM5G06FE

Manufacturer:

Toshiba ↗

File Size:

291.57 KB

Description:

Silicon epitaxial schottky barrier diode.

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SSM5G06FE Silicon Epitaxial Schottky Barrier Diode Toshiba

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