SSM5G06FE Silicon Epitaxial Schottky Barrier Diode

Toshiba

Description

SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications * Combined a P-chann.

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Datasheet Specifications

Part number: SSM5G06FE
Manufacturer: Toshiba ↗
File Size: 291.57 KB
Datasheet: SSM5G06FE-Toshiba.pdf
Description: Silicon Epitaxial Schottky Barrier Diode

Applications

* Combined a P-channel MOSFET and a Schottky barrier diode in one package.
* Optimum for high-density mounting in small packages Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Symbol Rating Unit Drain-Source voltage VDSS
* 20 V Gate-Source voltage VGSS

SSM5G06FE Distributors

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SSM5G06FE Silicon Epitaxial Schottky Barrier Diode Toshiba

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