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SSM5G10TU Silicon Epitaxial Schottky Barrier Diode

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Description

SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications * *

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Applications

* 1.8-V drive Combines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Drain power dissipation Chan

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Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor
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