Datasheet Specifications
- Part number
- SSM5G10TU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 906.40 KB
- Datasheet
- SSM5G10TU-ToshibaSemiconductor.pdf
- Description
- Silicon Epitaxial Schottky Barrier Diode
Description
SSM5G10TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications * *
Applications
* 1.8-V drive Combines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Drain power dissipation ChanSSM5G10TU Distributors
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