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SSM5G09TU DC-DC Converter

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Description

SSM5G09TU Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier SSM5G09TU 1.Applications * DC-DC Converters 2.Featur.

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Features

* (1) Combined an P-channel MOSFET and a diode in one package. (2) Low RDS(ON) and Low VF 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.5 V) 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Anode 4: Cathode 5:

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DC-DC Converter Toshiba Semiconductor
Toshiba Semiconductor SSM5G09TU-like datasheet