* (1) Combined an P-channel MOSFET and a diode in one package. (2) Low RDS(ON) and Low VF 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.5 V) 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Anode 4: Cathode 5:
SSM5G09TU Datasheet (284.42 KB)
SSM5G09TU
Toshiba ↗ Semiconductor
284.42 KB
Dc-dc converter.
SSM5G09TU
Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier
SSM5G09TU
1. Applications
* DC-DC Converters
2. Featur.
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