Datasheet Specifications
- Part number
- SSM5G09TU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 284.42 KB
- Datasheet
- SSM5G09TU_ToshibaSemiconductor.pdf
- Description
- DC-DC Converter
Description
SSM5G09TU Composite Devices Silicon P-Channel MOS (U-MOSIII)/Epitaxial Schottky Barrier SSM5G09TU 1.Applications * DC-DC Converters 2.Featur.
Features
* (1) Combined an P-channel MOSFET and a diode in one package. (2) Low RDS(ON) and Low VF 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 130 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 200 mΩ (max) (@VGS = -2.5 V) 3. Packaging and Internal Circuit 1: Gate 2: Source 3: Anode 4: Cathode 5:SSM5G09TU Distributors
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