Datasheet4U Logo Datasheet4U.com

SSM5H90ATU - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.5 V) (2) 2.5-V gate drive voltage. 2.2. Diode Features (1) Low reverse current: IR = 0.1 µA (typ. ) (@VR = 30 V) 3. Packaging and Internal Circuit SSM5H90ATU 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4. Absolute Maximum Ratings (Note) 4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise spe.

📥 Download Datasheet

Datasheet preview – SSM5H90ATU

Datasheet Details

Part number SSM5H90ATU
Manufacturer Toshiba
File Size 234.78 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM5H90ATU Datasheet
Additional preview pages of the SSM5H90ATU datasheet.

📁 Similar Datasheet

  • SSM5H01TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
  • SSM5H03TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
  • SSM5H05TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
  • SSM5H06FE - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
  • SSM5H07TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
  • SSM5H08TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
  • SSM5H11TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
  • SSM5H12TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
  • SSM5H14F - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
  • SSM5H16TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU 1. Applications • High-Speed Switching 2. Features (1) Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.5 V) (2) 2.5-V gate drive voltage. 2.2. Diode Features (1) Low reverse current: IR = 0.1 µA (typ.) (@VR = 30 V) 3. Packaging and Internal Circuit SSM5H90ATU 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4. Absolute Maximum Ratings (Note) 4.1.
Published: |