Datasheet Specifications
- Part number
- SSM5H90ATU
- Manufacturer
- Toshiba ↗
- File Size
- 234.78 KB
- Datasheet
- SSM5H90ATU-Toshiba.pdf
- Description
- Silicon N-Channel MOSFET
Description
Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU 1.Applications * High-Speed Switching 2..
Features
* (1) Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.5 V) (2) 2.5-V gate drive voltage. 2.2. Diode Features (1) Low reverse current: IR = 0.1 µA (typ. ) (@VR = 30 V)SSM5H90ATU Distributors
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