SSM5H90ATU - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.5 V) (2) 2.5-V gate drive voltage. 2.2. Diode Features (1) Low reverse current: IR = 0.1 µA (typ. ) (@VR = 30 V) 3. Packaging and Internal Circuit SSM5H90ATU 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain UFV 4. Absolute Maximum Ratings (Note) 4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise spe.

📁 SSM5H90ATU Similar Datasheet

SSM5H01TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
SSM5H03TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
SSM5H05TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
SSM5H06FE - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
SSM5H07TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
SSM5H08TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
SSM5H11TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)
SSM5H12TU - Silicon Epitaxial Schottky Barrier Diode (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Dec 15, 2023 |