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SSM5H03TU Datasheet - Toshiba Semiconductor

SSM5H03TU Silicon Epitaxial Schottky Barrier Diode

SSM5H03TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H03TU DC-DC Converter Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 12 ±12 1.4 2.8 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °.

SSM5H03TU Features

* an life or bodily injury (“Unintended Usage”). Unintended Usage includ

SSM5H03TU Datasheet (185.23 KB)

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Datasheet Details

Part number:

SSM5H03TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

185.23 KB

Description:

Silicon epitaxial schottky barrier diode.

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SSM5H03TU Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor

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