SSM5H08TU Datasheet (Toshiba Semiconductor) - Silicon Epitaxial Schottky Barrier Diode

SSM5H08TU, Silicon Epitaxial Schottky Barrier Diode

SSM5H08TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 20 ±12 1.5 6.0 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C D