SSM5H11TU Silicon Epitaxial Schottky Barrier Diode

Toshiba Semiconductor

Description

SSM5H11TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications * *

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Datasheet Specifications

Part number: SSM5H11TU
Manufacturer: Toshiba ↗ Semiconductor
File Size: 948.81 KB
Datasheet: SSM5H11TU-ToshibaSemiconductor.pdf
Description: Silicon Epitaxial Schottky Barrier Diode

Features

* S.
* Product is intended for use in general

Applications

* 4.0-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage DC Drain current Pulse Drain power dissipation Channel t

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SSM5H11TU Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor

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