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SSM5H16TU Datasheet - Toshiba Semiconductor

SSM5H16TU Silicon Epitaxial Schottky Barrier Diode

SSM5H16TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications 1.8-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) t = 10s Tch Rating 30 ± 12 1.9 3.8 0.5 0.8 150 Unit V V A Drain powe.

SSM5H16TU Features

* mpact (“Unintended Use”). Unintended Use includes, without limi

SSM5H16TU Datasheet (169.01 KB)

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Datasheet Details

Part number:

SSM5H16TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

169.01 KB

Description:

Silicon epitaxial schottky barrier diode.

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SSM5H16TU Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor

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