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SSM5H05TU Datasheet - Toshiba Semiconductor

SSM5H05TU Silicon Epitaxial Schottky Barrier Diode

SSM5H05TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 20 ±12 1.5 6.0 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C .

SSM5H05TU Datasheet (258.34 KB)

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Datasheet Details

Part number:

SSM5H05TU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

258.34 KB

Description:

Silicon epitaxial schottky barrier diode.

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SSM5H05TU Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor

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