Datasheet Specifications
- Part number
- SSM5H12TU
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 178.50 KB
- Datasheet
- SSM5H12TU-ToshibaSemiconductor.pdf
- Description
- Silicon Epitaxial Schottky Barrier Diode
Description
SSM5H12TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications * *
Features
* mation contained in this document, or in charts, diagrams, programs, algorithms, sApplications
* 1.8-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (NoteSSM5H12TU Distributors
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