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SSM5H14F Datasheet - Toshiba Semiconductor

SSM5H14F Silicon Epitaxial Schottky Barrier Diode

SSM5H14F Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut applications of the battery pack 1.8-V drive An N-ch MOSFET and a Schottky Barrier Diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Rating 30 ±12 3.0.

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SSM5H14F Datasheet (305.61 KB)

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Datasheet Details

Part number:

SSM5H14F

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

305.61 KB

Description:

Silicon epitaxial schottky barrier diode.

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SSM5H14F Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor

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