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SSM5H14F Silicon Epitaxial Schottky Barrier Diode

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Description

SSM5H14F Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut applications of the battery pack * .

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Features

* or incorporated into any products or systems whose manufacture, use, or sale is prohibited un

Applications

* of the battery pack
* 1.8-V drive An N-ch MOSFET and a Schottky Barrier Diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channe

SSM5H14F Distributors

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SSM5H90ATU SSM5G06FE SSM-14L1 SSM-2005 SSM-2014 SSM-2015

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SSM5H14F Silicon Epitaxial Schottky Barrier Diode Toshiba Semiconductor
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