SSM6L35FU Datasheet - Toshiba Semiconductor

SSM6L35FU Dual-Channel MOSFET

SSM6L35FU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FU ○ High-Speed Switching Applications ○ Analog Switch Applications N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = : Ron = : Ron = 8 Ω (max) (@VGS = 1.5 V) 4 Ω (max) (@VGS = 2.5 V) 3 Ω (max) (@VGS = 4.0 V) Unit: mm Q2 P-ch: Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@.

SSM6L35FU Features

* 50 10 -0.1 -1 -10 -100 -1000 0 0 20 40 60 80 100 120 140 160 Drain current ID (mA)

* :Total Rating Ambient temperature Ta (°C) 7 2008-03-21 SSM6L35FU RESTRICTIONS ON PRODUCT USE

* Tosh

SSM6L35FU-ToshibaSemiconductor.pdf