SSM6L36FE Datasheet - Toshiba Semiconductor

SSM6L36FE Dual-Channel MOSFET

SSM6L36FE www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance Q1 Nch: Ron = 1.52Ω (max) (@VGS = 1.5 V) Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) Q2 Pch: Ron = 3.60Ω (max) (@VGS = -1.5 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -.

SSM6L36FE Features

* ID (mA) Drain-source voltage VDS (V

SSM6L36FE_ToshibaSemiconductor.pdf