SSM6L36TU Datasheet - Toshiba Semiconductor

SSM6L36TU Dual-Channel MOSFET

SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU ○ High-Speed Switching Applications 1.5-V drive 0.65 0.65 Unit: mm 2.1±0.1 1.7±0.1 Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -4.5 V) 2 3 5 4 0.7±0.05 Q2 P-ch: Ron = 3.60Ω (max) (@VGS = -1.5 V) Q1 Absolute .

SSM6L36TU Features

* VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °

SSM6L36TU-ToshibaSemiconductor.pdf