SSM6L39TU Datasheet - Toshiba Semiconductor

SSM6L39TU Dual-Channel MOSFET

SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications N-ch: 1.5-V drive P-ch: 1.8-V drive 0.65 0.65 2.0±0.1 2.1±0.1 1.7±0.1 Unit: mm Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 20 ±10 1.6 3.2 Unit V V A 0.7±0.05 Q1 Absolute Maximum Ratings (Ta = 25°C) 1.Source1 2.Gate1 3.Drain2 4.Source2 .

SSM6L39TU Features

* 3 10 ton tr 1 -0.1 1 -0.01 -0.1 -1 -10 Drain-source voltage VDS

SSM6L39TU-ToshibaSemiconductor.pdf