SSM6L56FE Silicon Dual-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon P-/N-Channel MOS SSM6L56FE 1.Applications * High-Speed Switching 2..

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Datasheet Specifications

Part number: SSM6L56FE
Manufacturer: Toshiba ↗ Semiconductor
File Size: 373.47 KB
Datasheet: SSM6L56FE-ToshibaSemiconductor.pdf
Description: Silicon Dual-Channel MOSFET

Features

* (1) 1.5-V drive (2) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V, ID = 800 mA) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V, ID = 600 mA) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V, ID = 200 mA) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V, ID = 50 mA) Q2 P-channel: RDS(ON) = 390 mΩ (

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SSM6L56FE Silicon Dual-Channel MOSFET Toshiba Semiconductor

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