SSM6L61NU Datasheet - Toshiba Semiconductor

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Datasheet Details

Part number:

SSM6L61NU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

426.26 KB

Description:

Silicon dual-channel mosfet.

SSM6L61NU, Silicon Dual-Channel MOSFET

SSM6L61NU Features

* (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) Q2 P-channel: RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 15

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SSM6L61NU Silicon Dual-Channel MOSFET Toshiba Semiconductor

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