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SSM6L807R Datasheet - Toshiba Semiconductor

SSM6L807R Silicon Dual-Channel MOSFET

SSM6L807R Features

* (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 1

SSM6L807R Datasheet (545.99 KB)

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Datasheet Details

Part number:

SSM6L807R

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

545.99 KB

Description:

Silicon dual-channel mosfet.

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SSM6L807R Silicon Dual-Channel MOSFET Toshiba Semiconductor

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