SSM6L807R Silicon Dual-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon P-/N-Channel MOS SSM6L807R 1.Applications * Power Management Switches 2..

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Datasheet Specifications

Part number: SSM6L807R
Manufacturer: Toshiba ↗ Semiconductor
File Size: 545.99 KB
Datasheet: SSM6L807R-ToshibaSemiconductor.pdf
Description: Silicon Dual-Channel MOSFET

Features

* (1) Low drain-source on-resistance Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Q2 P-channel: RDS(ON) = 45 mΩ (max) (@VGS = -10 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 1

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SSM6L807R Silicon Dual-Channel MOSFET Toshiba Semiconductor

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