TC74AC10P, TC74AC10F Datasheet - Toshiba Semiconductor

TC74AC10P Triple 3-Input NAND Gate

TC74AC10P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC10P, TC74AC10F Triple 3-Input NAND Gate The TC74AC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stabl.

TC74AC10P Features

* High speed: tpd = 5.0 ns (typ.) at VCC = 5 V

* Low power dissipation: ICC = 4 μA (max) at Ta = 25°C

* High noise immunity: VNIH = VNIL = 28% VCC (min)

* Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines.

TC74AC10F_ToshibaSemiconductor.pdf