TH50VSF2580AASB Datasheet (Toshiba Semiconductor) - SRAM AND FLASH MEMORY MIXED MULTI-CHIP

TH50VSF2580AASB, SRAM AND FLASH MEMORY MIXED MULTI-CHIP

The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory.

The CIOS and CIOF inputs can be used to select the optimal memory configuration.

The power supply for the TH50VSF2580/2581AASB can range from 2.7 V to 3.6 V.

The TH50VS

TH50VSF2580AASB Features

* Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www.DataSheet4U.comCCf

* Data retention supply voltage VCCs = 1.5 V~3.6 V

* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level)

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