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TH50VSF2580AASB Datasheet - Toshiba Semiconductor

TH50VSF2580AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP

The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply for the TH50VSF2580/2581AASB can range from 2.7 V to 3.6 V. The TH50VS.

TH50VSF2580AASB Features

* Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www.DataSheet4U.comCCf

* Data retention supply voltage VCCs = 1.5 V~3.6 V

* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level)

* Bl

TH50VSF2580AASB_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TH50VSF2580AASB

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

609.49 KB

Description:

Sram and flash memory mixed multi-chip.

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TH50VSF2580AASB TH50VSF2580AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP Toshiba Semiconductor

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