TH50VSF2580AASB_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TH50VSF2581AASB, TH50VSF2580AASB
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
609.49 KB
Description:
Sram and flash memory mixed multi-chip.
Note:
This datasheet PDF includes multiple part numbers: TH50VSF2581AASB, TH50VSF2580AASB.
Please refer to the document for exact specifications by model.
TH50VSF2581AASB, TH50VSF2580AASB, SRAM AND FLASH MEMORY MIXED MULTI-CHIP
The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory.
The CIOS and CIOF inputs can be used to select the optimal memory configuration.
The power supply for the TH50VSF2580/2581AASB can range from 2.7 V to 3.6 V.
The TH50VS
TH50VSF2581AASB Features
* Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www.DataSheet4U.comCCf
* Data retention supply voltage VCCs = 1.5 V~3.6 V
* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level)
* Bl
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