Description
The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory.
Features
- Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www. DataSheet4U. com.
- Data retention supply voltage VCCs = 1.5 V~3.3 V.
- Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH).
- Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes.
- Organization.
- CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 2,097,152 words of 16 bits 2,097,152 words of 16 bits 4,194,.
TH50VSF3582AASB_ToshibaSemiconductor.pdf
