TH50VSF3582AASB Datasheet (Toshiba Semiconductor) - MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

TH50VSF3582AASB, MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory.

The CIOS and CIOF inputs can be used to select the optimal memory configuration.

The power supply.

FLASH MEMORY a Simultaneous Read/Write operation so that data can be

TH50VSF3582AASB Features

* Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com

* Data retention supply voltage VCCs = 1.5 V~3.3 V

* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH)

* Block eras