Datasheet4U Logo Datasheet4U.com

TH50VSF3582AASB Datasheet - Toshiba Semiconductor

TH50VSF3582AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be .

TH50VSF3582AASB Features

* Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com

* Data retention supply voltage VCCs = 1.5 V~3.3 V

* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH)

* Block eras

TH50VSF3582AASB_ToshibaSemiconductor.pdf

Preview of TH50VSF3582AASB PDF
TH50VSF3582AASB Datasheet Preview Page 2 TH50VSF3582AASB Datasheet Preview Page 3

Datasheet Details

Part number:

TH50VSF3582AASB

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

611.07 KB

Description:

Multi-chip integrated circuit silicon gate cmos.

📁 Related Datasheet

TH50VSF3583AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)

TH50VSF3680 SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE (Toshiba Semiconductor)

TH50VSF3681AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE (Toshiba Semiconductor)

TH50VSF2580AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP (Toshiba Semiconductor)

TH50VSF2581AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP (Toshiba Semiconductor)

TH50VSF2582AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP (Toshiba Semiconductor)

TH50VSF2583AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP (Toshiba Semiconductor)

TH50 HOUR METER (Panasonic)

TAGS

TH50VSF3582AASB TH50VSF3582AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

TH50VSF3582AASB Distributor