Description
The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory.
Features
- Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block erase architecture for flash memory 8 × 8 Kbytes 63 × 64 Kbytes Organization
CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 4,194,304 words of 16 bits 4,194,304 words of 16 bits 8,388,608 words of 8 bits SRAM 524,288 words of.
TH50VSF3681AASB_ToshibaSemiconductor.pdf
