Description
The TH50VSF2582/2583AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a 33,554,432-bit flash memory.
Features
- Power supply voltage VCCs = 2.7 V~3.6 V V = 2.7 V~3.6 V www. DataSheet4U. comCCf.
- Data retention supply voltage VCCs = 1.5 V~3.6 V.
- Current consumption Operating: 45 mA maximum (CMOS level) Standby: 7 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (flash CMOS level).
- Block erase architecture for flash memory 8 blocks of 8 Kbytes 63 blocks of 64 Kbytes.
- Organization.
- CIOF VCC VCC VSS CIOS VCC VSS VSS Flash Memory 2,097,152 words of 16 bits 2,097,152.
TH50VSF2582AASB_ToshibaSemiconductor.pdf
