Part number:
TH50VSF3680
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
585.37 KB
Description:
Sram and flash memory mixed multi-chip package.
* Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block erase architecture for fla
TH50VSF3680 Datasheet (585.37 KB)
TH50VSF3680
Toshiba ↗ Semiconductor
585.37 KB
Sram and flash memory mixed multi-chip package.
📁 Related Datasheet
TH50VSF3681AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE (Toshiba Semiconductor)
TH50VSF3582AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)
TH50VSF3583AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS (Toshiba Semiconductor)
TH50VSF2580AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP (Toshiba Semiconductor)
TH50VSF2581AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP (Toshiba Semiconductor)
TH50VSF2582AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP (Toshiba Semiconductor)
TH50VSF2583AASB SRAM AND FLASH MEMORY MIXED MULTI-CHIP (Toshiba Semiconductor)
TH50 HOUR METER (Panasonic)
TH501 HOUR METER (Panasonic)
TH501S HOUR METER (Panasonic)