Datasheet Details
Part number:
TH50VSF3680
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
585.37 KB
Description:
Sram and flash memory mixed multi-chip package.
TH50VSF3680_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TH50VSF3680
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
585.37 KB
Description:
Sram and flash memory mixed multi-chip package.
TH50VSF3680, SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory.
The CIOS and CIOF inputs can be used to select the optimal memory configuration.
The power supply.
FLASH MEMORY a Simultaneous Read/Write operation so that data can be
TH50VSF3680 Features
* Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block erase architecture for fla
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