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TH50VSF3680 Datasheet - Toshiba Semiconductor

TH50VSF3680 SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be .

TH50VSF3680 Features

* Power supply voltage VCCs = 2.7 V~3.3 V VCCf = 2.7 V~3.3 V Data retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH) Block erase architecture for fla

TH50VSF3680_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TH50VSF3680

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

585.37 KB

Description:

Sram and flash memory mixed multi-chip package.

TH50VSF3680 Distributor

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TH50VSF3680 TH50VSF3680 SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE Toshiba Semiconductor