Datasheet Details
Part number:
TH50VSF3583AASB, TH50VSF3582AASB
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
611.07 KB
Description:
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
Note:
This datasheet PDF includes multiple part numbers: TH50VSF3583AASB, TH50VSF3582AASB.
Please refer to the document for exact specifications by model.
Features
* Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com
* Data retention supply voltage VCCs = 1.5 V~3.3 V
* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH)
* Block eras
