TH50VSF3583AASB Features
* Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com
* Data retention supply voltage VCCs = 1.5 V~3.3 V
* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH)
* Block eras
TH50VSF3582AASB_ToshibaSemiconductor.pdf
Datasheet Details
TH50VSF3583AASB, TH50VSF3582AASB
Toshiba ↗ Semiconductor
611.07 KB
Multi-chip integrated circuit silicon gate cmos.
This datasheet PDF includes multiple part numbers: TH50VSF3583AASB, TH50VSF3582AASB.
Please refer to the document for exact specifications by model.
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TH50VSF3583AASB Distributor
