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TH50VSF3583AASB

MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS

TH50VSF3583AASB Features

* Power supply voltage VCCs = 2.67 V~3.3 V VCCf = 2.67 V~3.3 V www.DataSheet4U.com

* Data retention supply voltage VCCs = 1.5 V~3.3 V

* Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 µA maximum (SRAM CMOS level) Standby: 10 µA maximum (FLASH)

* Block eras

TH50VSF3583AASB General Description

The TH50VSF3582/3583AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration. The power supply. FLASH MEMORY a Simultaneous Read/Write operation so that data can be .

TH50VSF3583AASB Datasheet (611.07 KB)

Preview of TH50VSF3583AASB PDF

Datasheet Details

Part number:

TH50VSF3583AASB

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

611.07 KB

Description:

Multi-chip integrated circuit silicon gate cmos.

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TAGS

TH50VSF3583AASB MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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