TK12A65D Datasheet, Mosfet, Toshiba Semiconductor

TK12A65D Features

• Mosfet (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enha

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Part number:

TK12A65D

Manufacturer:

Toshiba ↗ Semiconductor

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263.59kb

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📄 Datasheet

Description:

N-channel mosfet.

TK12A65D Application

• Applications
• Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfe

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TK12A65D

Toshiba Semiconductor

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