TK16H60C Datasheet - Toshiba Semiconductor

TK16H60C, Silicon N-Channel MOSFET

TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK16H60C Switching Regulator Applications z Low drain *source .

Applications

* z Low drain
* source ON resistance : RDS (ON) = 0. 32 Ω (typ. ) z High forward transfer admittance : |Yfs| = 11 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25

TK16H60C-ToshibaSemiconductor.pdf