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TK16H60C Datasheet - Toshiba Semiconductor

TK16H60C Silicon N-Channel MOSFET

TK16H60C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK16H60C Switching Regulator Applications z Low drain source ON resistance : RDS (ON) = 0. 32 Ω (typ.) z High forward transfer admittance : |Yfs| = 11 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Drai.

TK16H60C Datasheet (208.99 KB)